Structural and electrical study of 〈Au/InP(100)〉 and 〈Au/InSb/InP(100)〉 systems
- 1 August 1993
- journal article
- Published by Wiley in Surface and Interface Analysis
- Vol. 20 (9) , 803-807
- https://doi.org/10.1002/sia.740200909
Abstract
The mechanisms for the formation of the systems 〈Au/InP(100)〉 and 〈Au/InSb/InP(100)〉 are connected with their electrical properties. By using quantitative AES, a precise knowledge of the atomic mechanisms allows us to perform the desired component such as a Schottky diode. The best results are obtained for the 〈Au/heated InSb/InP〉 system with a barrier height of 0.7 eV.Keywords
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