Optimization of a MoSe2 thin film deposition technique
- 31 October 1988
- journal article
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 20 (3) , 201-214
- https://doi.org/10.1016/0254-0584(88)90061-2
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Study of r.f. magnetron-sputtered MoSe2 films by electron spectroscopy for chemical analysisThin Solid Films, 1985
- Electrical and optical properties of MoSe2 films prepared by r.f. magnetron sputteringThin Solid Films, 1985
- Morphological and compositional properties of MoSe2 films prepared by r.f. magnetron sputteringThin Solid Films, 1984
- Semiconductor Photoelectrochemical Solar CellsPhysica Status Solidi (a), 1982
- Further studies of the photoelectrochemical properties of the group VI transition metal dichalcogenidesSolar Energy Materials, 1982
- Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenidesThe Journal of Physical Chemistry, 1982
- Photoinduced layer phenomenon caused by iodine formation in MoSe2: electrolyte (iodide) junctionsElectrochimica Acta, 1981
- Electrochemical solar cells based on layer-type transition metal compounds: Performance of electrode materialSolar Energy Materials, 1979
- The low-energy absorption edge in 2H-MoS2and 2H-MoSe2Philosophical Magazine, 1975
- Electrical Properties of the MoTe2−WTe2 and MoSe2−WSe2 SystemsJournal of Applied Physics, 1964