A new method for the determination of the interface-state density in the presence of statistical fluctuations of the surface potential
- 1 September 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (5) , 265-267
- https://doi.org/10.1063/1.1654883
Abstract
A new method for the analysis of the high‐ and low‐frequency MOS C–V characteristics is proposed to determine the interface‐state density in the presence of statistical fluctuations of the surface potential. This method provides simultaneously the mean oxide charge and the variance of its Gaussian distribution.Keywords
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