Liquid phase epitaxial growth of SiC
- 1 February 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 197 (1-2) , 147-154
- https://doi.org/10.1016/s0022-0248(98)00878-1
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Silicon carbide grown by liquid phase epitaxy in microgravityJournal of Materials Research, 1998
- Wetting Properties and Interfacial Energies in Liquid Phase Growth of α-SiCMaterials Science Forum, 1998
- Thermodynamic properties of scandium carbidesJournal of Alloys and Compounds, 1995
- Structural analysis of 4H-SiC layers grown on 6H-SiC and 15R-SiC substratesJournal of Crystal Growth, 1995
- Phases in rapidly cooled scandium-silicon samplesJournal of Alloys and Compounds, 1994
- EquilibriumPublished by Springer Nature ,1984
- Development of depressions and voids during LPE growth of GaAsApplied Physics A, 1978
- Study of the silicon carbide preparation in the silicon–scandium–carbon systemPhysica Status Solidi (a), 1975
- The Growth of α-SiC from Various Chromium Alloys by a Travelling Solvent MethodJournal of the Electrochemical Society, 1965
- Crystal Growth of GaAs from Ga by a Traveling Solvent MethodJournal of Applied Physics, 1963