Structural analysis of 4H-SiC layers grown on 6H-SiC and 15R-SiC substrates
- 2 July 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 152 (4) , 292-299
- https://doi.org/10.1016/0022-0248(95)00091-7
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Structural macro-defects in 6H-SiC wafersJournal of Crystal Growth, 1993
- Epitaxial growth of silicon carbide layers by sublimation „sandwich method”︁ (I) growth kinetics in vacuumCrystal Research and Technology, 1979
- Investigation of growth processes of ingots of silicon carbide single crystalsJournal of Crystal Growth, 1978
- A method for the examination of crystal sections using penetrating characteristic X radiationActa Metallurgica, 1957