The Twelve-Line 1.682 eV Luminescence Center in Diamond and the Vacancy-Silicon Complex
- 30 September 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 77 (14) , 3041-3044
- https://doi.org/10.1103/physrevlett.77.3041
Abstract
Ab initio cluster methods are used to investigate vacancy-impurity complexes in diamond. We assign the 1.682 eV, twelve-line optical band to a vacancy-Si complex which has a very unusual, possibly unique structure with a Si atom at the center of a split vacancy. The method also successfully accounts for the 1.945, 2.156, and 2.985 eV optical transitions in trigonal vacancy-N defects and estimates of radiative lifetimes are given.Keywords
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