Magnetic-field dependence of electron spin relaxation inn-type semiconductors

We present a theoretical investigation of the magnetic-field dependence of the longitudinal ${(T}_1)$ and transverse ${(T}_2)$ spin-relaxation times of conduction-band electrons in n-type III-V semiconductors. We find that the interplay between the Dyakonov-Perel process and an additional spin-relaxation channel, which originates from the electron wave-vector dependence of the electron g factor, yields a maximal $T_2$ at a finite magnetic field. We compare our results with existing experimental data on n-type GaAs and make specific additional predictions for the magnetic-field dependence of electron-spin lifetimes.