Magnetic field dependence of electron spin relaxation in n-type semiconductors
Abstract
We present a theoretical investigation of the magnetic field dependence of the longitudinal (T_1) and transverse (T_2) spin relaxation times of conduction band electrons in n-type III-V semiconductors. Because the electron g-factor depends on the electron wave vector, a magnetic field opens an additional channel for spin relaxation which competes with the Elliott-Yafet and the Dyakonov-Perel processes. In particular, we find that the interplay between the Dyakonov-Perel process and this additional spin relaxation channel yields a maximal T_2 at a finite magnetic field. We compare our results with existing experimental data on n-type GaAs and make specific additional predictions for the magnetic field dependence of electron spin lifetimes.Keywords
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