Nucleation of GaAs on CaF2/Si(111) substrates

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Abstract
Two different nucleation modes in epitaxial growth of GaAs on CaF2/Si(111) substrates have been identified. At low temperature (below 500 °C). GaAs nucleates on CaF2(111) surface with a three‐dimensional mode. When Ts is high (higher than 590 °C), two‐dimensional nucleation of GaAs can be achieved on the CaF2/Si(111) surface under a proper As flux. A thorough investigation of this phenomenon has been carried out using Rutherford backscattering spectrometry. A stable As layer has been observed on the CaF2(111) surface when the CaF2/Si(111) substrates are treated at high temperatures and under a high enough As flux (≥2×10−5 mbar). The formation of this As layer is understood as a consequence of a chemical reaction between As adatoms and the CaF2 surface. The existence of the As layer modifies the surface free energy of CaF2/Si(111) substrates and leads to a transition in the GaAs nucleation mode. By controlling the nucleation mode, high quality GaAs has been grown on the top of CaF2/Si(111) substrates without using electron‐beam modification of the CaF2 surface, and, thus, avoids irradiation damage of the epitaxial initiation surface.