Residual strains in epitaxial fluorides on Si(111) substrates

This publication has 15 references indexed in Scilit:

• High temperature Knudsen cell with graphite heating element
  Journal of Vacuum Science & Technology A, 1991
• Strain in epitaxial GaAs on CaF2/Si(111)
  Journal of Vacuum Science & Technology B, 1990
• The driving force for glide of a threading dislocation in a strained epitaxial layer on a substrate
  Journal of the Mechanics and Physics of Solids, 1990
• Strain in Epitaxial GaAs on Si and CaF₂/Si
  MRS Proceedings, 1987
• Strain relief in epitaxial fluoride buffer layers for semiconductor heteroepitaxy
  Applied Physics Letters, 1986
• Steering effect at a strained NiSi2/Si (001) interface
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
• Electrical Properties and Structural Defects in Epitaxial CaF₂ on Si
  MRS Proceedings, 1986
• Strain measurement of epitaxial CaF2 on Si (111) by MeV ion channeling
  Applied Physics Letters, 1985
• Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates
  Japanese Journal of Applied Physics, 1983
• Tetragonal Strain in MBE Ge_xSi_1-x Films Grown on (100) Si Observed by Ion Channeling and X-Ray Diffraction
  MRS Proceedings, 1983