Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates

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Abstract
Growth conditions and structures of vacuum-evaporated heteroepitaxial CaF2, SrF2 and BaF2 films on (111) and (100) oriented Si substrates have been investigated. Single crystal CaF2 films are grown on both Si(111) and (100) substrates at temperatures of 600–800°C and 500–600°C, respectively. CaF2 films on Si(111) have crystal orientations rotated 180° about the normal to the substrate surface. SrF2 and BaF2 films of good crystalline quality are grown on Si(111) at temperatures around 600°C, but are composed of two types of crystallites which have orientations either idential to those of the substrate or rotated 180° on the substrate surface about the surface normal. SrF2 and BaF2 films grown on Si(100) contain (111) oriented crystallites, and, in an extreme case, completely (111) oriented BaF2 films were grown on Si(100).