Epitaxial relations in group-IIa fluoride/Si(111) heterostructures
- 15 March 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (6) , 517-519
- https://doi.org/10.1063/1.93988
Abstract
CaF2, SrF2, BaF2, and mixed (Ca,Sr)F2 films have been grown epitaxially on Si (111) substrates by vacuum evaporation. The epitaxial relation between these fluoride films and the substrates has been investigated by ion channeling analysis. Both the CaF2 and SrF2 films prefer to have orientations rotated 180° about the normal to the substrate surface. In contrast, the vast majority of (Ca,Sr)F2 films have orientations identical to those of the substrate, and the BaF2 film is composed of a mixture of the two. Analysis was also made on a Si/CaF2/Si(111) double heterostructure, which showed that the top Si film is again rotated 180° about the normal to the underlying CaF2 surface.Keywords
This publication has 7 references indexed in Scilit:
- An epitaxial Si/insulator/Si structure prepared by vacuum deposition of CaF2 and siliconThin Solid Films, 1982
- The effects of nucleation and growth on epitaxy in the CoSi2/Si systemThin Solid Films, 1982
- Epitaxial silicidesThin Solid Films, 1982
- Growth of single-crystal CoSi2 on Si(111)Applied Physics Letters, 1982
- Formation of an Epitaxial Si/Insulator/Si Structure by Vacuum Deposition of CaF2 and SiJapanese Journal of Applied Physics, 1982
- Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and SiApplied Physics Letters, 1982
- MBE-grown fluoride films: A new class of epitaxial dielectricsJournal of Vacuum Science and Technology, 1981