Optically pumped InGaN/GaN double heterostructurelasers with cleaved facets
- 19 February 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (4) , 373-375
- https://doi.org/10.1049/el:19980323
Abstract
Optically pumped laser action is demonstrated in an InGaN/GaN double heterostructure with a 1000 Å thick InGaN active region. Hydride vapour phase epitaxy (HVPE) is used to grow a 10 µm thick GaN buffer layer on (0001) sapphire, and the GaN/In0.09Ga0.91N/GaN double heterostructure is subsequently grown by metal organic vapour phase epitaxy (MOVPE). 1 mm long cavities are produced by cleaving the structure along the (101̄0) plane of the sapphire substrate. Optical pumping at room temperature with a pulsed nitrogen laser yields an incident threshold power density of 1.3 MW/cm2. Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarised.Keywords
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