Improved performance of strained InGaAs/GaAs photodiodes grown on patterned GaAs substrates by molecular beam epitaxy
- 6 May 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (18) , 1931-1933
- https://doi.org/10.1063/1.105049
Abstract
We have experimentally studied the photoresponse characteristics of strained InxGa1−xAs (0.05≤x≤0.20) p‐i‐n photodiodes grown in small holes etched in GaAs substrates where the thickness of the i region exceeds the critical thickness. The diodes exhibit enhanced quantum efficiency and no degradation of the temporal response compared with devices grown on planar substrates, indicating that reduced area growth may be a useful technique for making optoelectronic devices with strained‐layer structuresKeywords
This publication has 6 references indexed in Scilit:
- High-power fundamental mode AlGaAs quantum well channeled substrate laser grown by molecular beam epitaxyApplied Physics Letters, 1989
- Stimulated emission in semiconductor quantum wire heterostructuresPhysical Review Letters, 1989
- Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth areaJournal of Applied Physics, 1989
- Kinetic aspects of growth front surface morphology and defect formation during molecular-beam epitaxy growth of strained thin filmsJournal of Vacuum Science & Technology B, 1989
- Problems related to the formation of lateral p–n junctions on channeled substrate (100) GaAs for lasersJournal of Vacuum Science & Technology B, 1988
- Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substratesApplied Physics Letters, 1987