Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substrates

This publication has 8 references indexed in Scilit:

• High quality molecular beam epitaxial growth on patterned GaAs substrates
  Applied Physics Letters, 1985
• Structure variation of the index of refraction of GaAs-AlAs superlattices and multiple quantum wells
  Applied Physics Letters, 1985
• Single-longitudinal-mode GaAs/GaAlAs channeled-substrate lasers grown by molecular beam epitaxy
  Applied Physics Letters, 1984
• Refractive index of GaAs-AlAs superlattice grown by MBE
  Journal of Electronic Materials, 1983
• Optical characterization of interface disorder in multi-quantum well structures
  Solid State Communications, 1981
• Self-aligned three-dimensional Ga1−xAlxAs structures grown by molecular beam epitaxy
  Applied Physics Letters, 1977
• Growth of GaAs-Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two-dimensional thin-film definition
  Applied Physics Letters, 1977
• Quantum States of Confined Carriers in Very Thin ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$-GaAs-${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ Heterostructures
  Physical Review Letters, 1974