High quality molecular beam epitaxial growth on patterned GaAs substrates
- 1 October 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (7) , 712-715
- https://doi.org/10.1063/1.96012
Abstract
In this letter we describe a procedure for high quality molecular beam epitaxy (MBE) growth over finely patterned GaAs substrates which is suitable for device fabrication requiring lateral definition of small (∼1–2 μm) dimension. This method was used for the fabrication of index guided laser arrays. Yields of individual lasers exceeded 90%, and thresholds were uniform to 10%. Temperature and flux ratio dependence of faceting during MBE growth over patterned substrates is shown for temperatures ranging from 580 to 700 °C and for As/Ga flux ratios from 1.4:1 to 4:1. The real index guided structure, which can be formed by a single MBE growth over a ridged substrate, is discussed. This technique should prove useful in the fabrication of devices which take advantage of unique features formed during regrowth by MBE.Keywords
This publication has 6 references indexed in Scilit:
- Single-longitudinal-mode GaAs/GaAlAs channeled-substrate lasers grown by molecular beam epitaxyApplied Physics Letters, 1984
- Monolithic integration of an AlGaAs/GaAs multiquantum well laser and GaAs metal-semiconductor field-effect transistors on a semi-insulating GaAs substrate by molecular beam epitaxyApplied Physics Letters, 1984
- Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxyElectronics Letters, 1980
- Self-aligned three-dimensional Ga1−xAlxAs structures grown by molecular beam epitaxyApplied Physics Letters, 1977
- GaAs planar technology by molecular beam epitaxy (MBE)Journal of Applied Physics, 1975
- Growth of three-dimensional dielectric waveguides for integrated optics by molecular-beam-epitaxy methodApplied Physics Letters, 1972