All-perovskite-oxide ferroelectric memory transistor composed of Bi2Sr2CuOx and PbZr0.5Ti0.5O3 films

An all-perovskite-oxide transistor composed of a tetragonal perovskite ${\mathrm{PbZr}}_{\mathrm{0.5}}{\mathrm{Ti}}_{\mathrm{0.5}}{\mathrm{O}}_{\mathrm{3}}$ (ferroelectric) and a layered perovskite ${\mathrm{Bi}}_{\mathrm{2}}{\mathrm{Sr}}_{\mathrm{2}}{\mathrm{CuO}}_{\mathrm{6}}$ (conducting channel) is fabricated on a cubic perovskite Nb-doped ${\mathrm{SrTiO}}_{\mathrm{3}}$ (gate electrode). We demonstrate a considerably large conductance modulation of ${\mathrm{Bi}}_{\mathrm{2}}{\mathrm{Sr}}_{\mathrm{2}}{\mathrm{CuO}}_{\mathrm{6}}$ by varying the direction and magnitude of the polarization. The ratio of the ON- and OFF-state drain currents reaches 196. A memory retention time as long as about 8 h is also observed. The drain current versus the drain voltage curves analyzed by adopting a semiconductor model give fairly good agreement with the measurement data. We also discuss the advantages and future prospects of all-perovskite-oxide transistors.