Reaction between reaction-bonded Si3N4 and titanium thin films
- 1 September 1985
- journal article
- Published by Springer Nature in Journal of Materials Science Letters
- Vol. 4 (9) , 1062-1066
- https://doi.org/10.1007/bf00720416
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- TiN formed by evaporation as a diffusion barrier between Al and SiJournal of Vacuum Science and Technology, 1982
- Si(L V V) Auger spectra of amorphous Si-oxide, Si-nitride, and Si-oxinitrideJournal of Applied Physics, 1980
- Thin film interaction between titanium and polycrystalline siliconJournal of Applied Physics, 1980
- Chemical shifts in auger electron spectra from silicon in silicon nitrideSurface Science, 1976