Impurity band states in SI(P)
- 1 November 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 20 (8) , 811-813
- https://doi.org/10.1016/0038-1098(76)90301-x
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Photoluminescent detection of the impurity band in Si(P)Solid State Communications, 1976
- Electron-hole droplets and impurity band states in heavily doped Si(P): Photoluminescence experiments and theoryPhysical Review B, 1976
- Temperature Dependence of Silicon Luminescence Due to Splitting of the Indirect Ground StatePhysical Review Letters, 1975
- Metal-Nonmetal Transition in Doped SemiconductorsProgress of Theoretical Physics Supplement, 1975
- Photoluminescent studies of the condensed phase in phosphorus-doped siliconSolid State Communications, 1973
- Ferromagnetism in a Narrow, Almost Half-FilledBandPhysical Review B, 1966
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960