Novel top‐gate zinc oxide thin‐film transistors (ZnO TFTs) for AMLCDs

This publication has 12 references indexed in Scilit:

• Transparent thin-film transistors with zinc indium oxide channel layer
  Journal of Applied Physics, 2005
• High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
  Applied Physics Letters, 2004
• Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
  Applied Physics Letters, 2004
• Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
  Science, 2003
• High Mobility Thin Film Transistors with Transparent ZnO Channels
  Japanese Journal of Applied Physics, 2003
• Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
  Applied Physics Letters, 2003
• ZnO-based transparent thin-film transistors
  Applied Physics Letters, 2003
• Transparent thin film transistors using ZnO as an active channel layer and their electrical properties
  Journal of Applied Physics, 2003
• Bottom-gate poly-Si thin film transistors using XeCl excimer laser annealing and ion doping techniques
  IEEE Transactions on Electron Devices, 1993
• XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's
  IEEE Electron Device Letters, 1986