Frequency-dependent characteristics and trap studies of lattice-matched (x=0.53) and strained (x<0.53) In/sub 0.52/Al/sub 0.48/As/In/sub x/ Ga/sub 1-x/As HEMTs
- 1 April 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (4) , 862-870
- https://doi.org/10.1109/16.75216
Abstract
No abstract availableKeywords
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