Backgating studies in In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As modulation-doped field-effect transistors

This publication has 11 references indexed in Scilit:

• Roles of shallow and deep electron traps causing backgating in GaAs metal-semiconductor field-effect transistors
  Applied Physics Letters, 1986
• VIA-6 Comparison of side-gating behavior between InP MISFET's and GaAs MESFET's
  IEEE Transactions on Electron Devices, 1985
• Backgating characteristics of MODFET structures
  IEEE Electron Device Letters, 1985
• The roles of the surface and bulk of the semi-insulating substrate in low-frequency anomalies of GaAs integrated circuits
  IEEE Transactions on Electron Devices, 1985
• Correlation between the backgating effect of a GaAs MESFET and the compensation mechanism of a semi-insulating substrate
  IEEE Transactions on Electron Devices, 1985
• Geometrical and light-induced effects on back-gating in ion-implanted GaAs MESFET's
  IEEE Transactions on Electron Devices, 1985
• Backgating in GaAs/(Al,Ga)As modulation-doped field-effect transistors and its reduction with a superlattice
  Applied Physics Letters, 1984
• GaAs/AlGaAs double heterostructure high electron mobility transistors
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1984
• Carrier injection and backgating effect in GaAs MESFET's
  IEEE Electron Device Letters, 1982
• Backside-gated modulation-doped GaAs-(AlGa)As heterojunction interface
  Applied Physics Letters, 1981