Backside-gated modulation-doped GaAs-(AlGa)As heterojunction interface
- 15 September 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (6) , 493-495
- https://doi.org/10.1063/1.92771
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- High mobility GaAs-Al
x
Ga
1−
x
As single period modulation-doped heterojunctionsElectronics Letters, 1981
- Modulation-doped MBE GaAs/n-AlxGa1-xAs MESFETsIEEE Electron Device Letters, 1981
- Growth conditions to achieve mobility enhancement in Al x Ga 1−x As-GaAs heterojunctions by m.b.e.Electronics Letters, 1980
- Calculation of Stacking Fault Energy by Use of Long-Range Interionic Potential. I. Application of Ewald MethodJournal of the Physics Society Japan, 1980
- Two-dimensional electron gas m.e.s.f.e.t. structureElectronics Letters, 1980
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980
- Two-dimensional electron gas at differentially doped GaAs–AlxGa1−xAs heterojunction interfaceJournal of Vacuum Science and Technology, 1979
- Observation of two-dimensional electrons in LPE-grown GaAs-AlxGa1−xAs heterojunctionsApplied Physics Letters, 1979
- Two-dimensional electron gas at a semiconductor-semiconductor interfaceSolid State Communications, 1979