Nongeminate radiative recombination in sputtered and glow dischargea-Si:H

Abstract
We report measurements of the excitation intensity dependence of the photoluminescence efficiency of the 1.4-eV band in both sputtered and glow discharge prepared a-Si:H. We observe that sputtered samples show very weak nongeminate radiative recombination in comparison with glow discharge samples of comparable low-temperature luminescence efficiency and midgap state density. A structural model is tentatively proposed to account for these differences.