Nongeminate radiative recombination in sputtered and glow discharge-Si:H
- 15 April 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 25 (8) , 5263-5266
- https://doi.org/10.1103/physrevb.25.5263
Abstract
We report measurements of the excitation intensity dependence of the photoluminescence efficiency of the 1.4-eV band in both sputtered and glow discharge prepared -Si:H. We observe that sputtered samples show very weak nongeminate radiative recombination in comparison with glow discharge samples of comparable low-temperature luminescence efficiency and midgap state density. A structural model is tentatively proposed to account for these differences.
Keywords
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