Characterized of glow-discharge deposited a-Si:H
- 30 November 1980
- journal article
- Published by Elsevier in Solar Energy Materials
- Vol. 3 (4) , 447-501
- https://doi.org/10.1016/0165-1633(80)90001-5
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- Determination of the electronic density of states in hydrogenated amorphous silicon (a-SiH) from Schottky diode capacitance-voltage and conductance-voltage measurementsJournal of Non-Crystalline Solids, 1980
- Optical absorption of SiH0.16 films near the optical GAPJournal of Non-Crystalline Solids, 1980
- Post-hydrogenation of CVD deposited a-Si filmsJournal of Non-Crystalline Solids, 1980
- The interpretation of transport results in amorphous siliconJournal of Non-Crystalline Solids, 1980
- Plasma spectroscopy control and analysis of a-Si:H depositionJournal of Non-Crystalline Solids, 1980
- Growth morphology and defects in plasma-deposited a-Si:H filmsJournal of Non-Crystalline Solids, 1980
- Effect of adsorbates and insulating layers on the conductance of plasma deposited a-Si:HJournal of Non-Crystalline Solids, 1980
- Hole diffusion length measurements in discharge-produced aSi:HJournal of Non-Crystalline Solids, 1980
- Exodiffusion of hydrogen in amorphous siliconJournal of Non-Crystalline Solids, 1980
- Properties of amorphous Si:F:H alloysJournal of Non-Crystalline Solids, 1980