Determination of the electronic density of states in hydrogenated amorphous silicon (a-SiH) from Schottky diode capacitance-voltage and conductance-voltage measurements

This publication has 5 references indexed in Scilit:

• Diodes Schottky et MIS tunnel sur silicium amorphe hydrogéné de qualité photovoltaïque préparé par pulvérisation cathodique Caractérisation électrique par mesures capacitives
  Revue de Physique Appliquée, 1979
• An investigation of the amorphous-silicon barrier and p-n junction
  Philosophical Magazine Part B, 1978
• Preparation of highly photoconductive amorphous silicon by rf sputtering
  Solid State Communications, 1977
• Characterization of multiple deep level systems in semiconductor junctions by admittance measurements
  Solid-State Electronics, 1974
• The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
  Bell System Technical Journal, 1967