Comparison of laser-initiated and thermal chemical vapor deposition of tungsten films
- 15 September 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (6) , 623-625
- https://doi.org/10.1063/1.95333
Abstract
ArF excimer laser radiation has been used to deposit W films on silicon and on SiO2 by initiating the gas phase reaction of WF6 with H2. Deposition rates >100 nm/min and film resistivities as low as two times the bulk value have been obtained at deposition temperatures of 440 °C. The properties of the laser-deposited films are compared with those of fims obtained using conventional thermal deposition techniques. Film resistivity correlates with the microstructure which in turn depends on the deposition temperature; above 350 °C the low-resistivity α-W phase dominates.Keywords
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