Analytical approach to breakdown voltages in thin-film SOI power MOSFETs
- 31 January 1996
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (1) , 95-100
- https://doi.org/10.1016/0038-1101(95)00090-g
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Breakdown voltage enhancement for devices on thin silicon layer/silicon dioxide filmIEEE Transactions on Electron Devices, 1991
- Optimization of RESURF LDMOS transistors: an analytical approachIEEE Transactions on Electron Devices, 1990
- Relation between oxide thickness and the breakdown voltage of a planar junction with field relief electrodeIEEE Transactions on Electron Devices, 1979