Switching Characteristics of Nonlinear Field-Effect Transistors: Gallium-Arsenide Versus Silicon
- 1 May 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 28 (5) , 442-448
- https://doi.org/10.1109/tmtt.1980.1130098
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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