Room temperature CW Operation of a GaInAs/GaInAsP/InP SCH Laser with Quantum-Wire Size Active Region
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 234-235
- https://doi.org/10.1109/islc.1992.763651
Abstract
A room temperature CW operation of a GaInAs/GaInAsP/InP SCH quantum-wire laser with 5nm thick and 10-30nm wide vertically stacked triple-wire active region was achieved by using 2-step LP-OMVPE growth on p-type InP substrate, to increase the hole injection efficiency, and direct writing by an electron beam exposure followed by wet chemical etching.Keywords
This publication has 2 references indexed in Scilit:
- Room temperature operation of GaInAs-GaInAsP-InP SCH multiquantum-film laser with narrow wire-like active regionIEEE Photonics Technology Letters, 1991
- Fabrication technique for GaInAsP/InP quantum wire structure by LP-MOVPEJournal of Crystal Growth, 1988