A study of turn-off limitations and failure mechanisms of GTO thyristors by means of 2-D time-resolved optical measurements
- 30 November 1992
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (11) , 1683-1695
- https://doi.org/10.1016/0038-1101(92)90198-l
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- A time-resolved optical system for spatial characterization of the carrier distribution in a gate turn-off thyristor (GTO)IEEE Transactions on Instrumentation and Measurement, 1990
- A time- and temperature-dependent two-dimensional simulation of GTO turnoff process II—Inductive load caseSolid-State Electronics, 1985
- Second breakdown in power transistors due to avalanche injectionIEEE Transactions on Electron Devices, 1976
- Second breakdown and damage in junction devicesIEEE Transactions on Electron Devices, 1973
- Second-breakdown phenomena in avalanching silicon-on-sapphire diodesIEEE Transactions on Electron Devices, 1972
- Avalanche injection and second breakdown in transistorsIEEE Transactions on Electron Devices, 1970
- Negative resistance and filamentary currents in avalanching silicon p+-i-n+junctionsIEEE Transactions on Electron Devices, 1968
- Fine structure and electromagnetic radiation in second breakdownIEEE Transactions on Electron Devices, 1964
- Specific Negative Resistance in SolidsProceedings of the Physical Society, 1963
- Mesoplasmas and “second breakdown” in silicon junctionsSolid-State Electronics, 1963