A High Current Gain Si Metal Insulator Semiconductor Tunnel Emitter Transistor

1 February 1993

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 32 (2A) , L180
https://doi.org/10.1143/jjap.32.l180

Abstract

A Si metal insulator semiconductor tunnel emitter transistor (Si MIS TET) was fabricated and investigated. The current gain of the Si MIS TET with a 32 Å SiO₂emitter barrier was 76 at 300 K and 74 at 100 K. It was confirmed that the inversion base layer indeed functioned as a base of the Si MIS TET.

Keywords

This publication has 3 references indexed in Scilit:

Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)
Japanese Journal of Applied Physics, 1991
Concepts of gain at an oxide-semiconductor interface and their application to the TETRAN—A tunnel emitter transistor—And to the MIS switching device
Solid-State Electronics, 1986
Temperature dependence of MOS transistor characteristics below saturation
IEEE Transactions on Electron Devices, 1966