Temperature dependence of MOS transistor characteristics below saturation

1 December 1966

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. ED-13 (12) , 863-866
https://doi.org/10.1109/t-ed.1966.15860

Abstract

The temperature dependence of MOS transistor characteristics in the region below saturation is studied theoretically and experimentally. The variation of channel conductance with temperature is shown to be due to the variation of the threshold voltage and of the inversion layer mobility. Both variations can be predicted in reasonable agreement with experimental observations. It is shown that the role of fast surface states in determining the temperature dependence is negligible.

Keywords

This publication has 10 references indexed in Scilit:

Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions
Solid-State Electronics, 1966
Temperature effects in m.o.s. transistors
Electronics Letters, 1966
The use of MOS structure for the design of high value resistors in monolithic integrated circuits
IEEE Transactions on Electron Devices, 1966
Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces
IEEE Transactions on Electron Devices, 1965
Temperature dependence of n-type MOS transistors
IEEE Transactions on Electron Devices, 1965
Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures
Solid-State Electronics, 1965
Characteristics of the metal-Oxide-semiconductor transistors
IEEE Transactions on Electron Devices, 1964
Design theory of a surface field-effect transistor
Solid-State Electronics, 1964
The silicon insulated-gate field-effect transistor
Proceedings of the IEEE, 1963
Electrical Properties of Silicon Containing Arsenic and Boron
Physical Review B, 1954