TRANSIENT VOLTAGE BREAKDOWN DUE TO AVALANCHE IN MIS CAPACITORS
- 15 December 1966
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 9 (12) , 444-446
- https://doi.org/10.1063/1.1754647
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial layers by the mos capacitance methodSolid-State Electronics, 1966
- AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaPApplied Physics Letters, 1966
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Metal Precipitates in Silicon p-n JunctionsJournal of Applied Physics, 1960
- Effect of Dislocations on Breakdown in Silicon p-n JunctionsJournal of Applied Physics, 1958