Raman scattering study of surface barriers in GaAs passivated in alcoholic sulfide solutions
- 1 September 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (5) , 2640-2642
- https://doi.org/10.1063/1.366079
Abstract
Raman scattering has been used to study the variation of surface barriers in GaAs due to sulfur passivation in solutions of ammonium sulfide [(NH4)2S] in different alcohols (ethanol, isopropanol, and tert-butanol). It has been found that the surface barrier height and the depletion layer width decrease considerably with the decrease of the dielectric constant of the passivating solution.This publication has 9 references indexed in Scilit:
- Sulfidization of GaAs in alcoholic solutions: a method having an impact on efficiency and stability of passivationMaterials Science and Engineering: B, 1997
- Solvent effect on the properties of sulfur passivated GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Analysis of band bending at III–V semiconductor interfaces by Raman spectroscopySurface Science Reports, 1993
- Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bondsApplied Physics Letters, 1989
- Raman scattering measurements of decreased barrier heights in GaAs following surface chemical passivationApplied Physics Letters, 1987
- Schottky Barrier Height Enhancement on M‐P+‐N Structures Including Free‐CarriersJournal of the Electrochemical Society, 1986
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Raman scattering by coupled LO-phonon—plasmon modes and forbidden TO-phonon Raman scattering in heavily doped-type GaAsPhysical Review B, 1981
- Surface states associated with acid sites on solidsSurface Science, 1975