Trap states elucidated by a.c. conductance measurement in polycrystalline chemically vapour-deposited diamond films
- 1 April 1993
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 2 (5-7) , 803-807
- https://doi.org/10.1016/0925-9635(93)90227-s
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Electrical conduction in undoped diamond films prepared by chemical vapor depositionApplied Physics Letters, 1991
- Properties of Boron-Doped Epitaxial Diamond FilmsJapanese Journal of Applied Physics, 1990
- Resistivity of chemical vapor deposited diamond filmsApplied Physics Letters, 1989
- Characterization of Boron-Doped Diamond FilmJapanese Journal of Applied Physics, 1989
- Frequency-dependent conductivity in sputtered amorphous phosphorus thin filmsPhysical Review B, 1985
- Vapor growth of diamond on diamond and other surfacesJournal of Crystal Growth, 1981
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- The nature of the acceptor centre in semiconducting diamondJournal of Physics C: Solid State Physics, 1971