Electron Spin Resonance of Oxygen-Nitrogen Complex in Silicon
- 1 January 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (1R) , 142-143
- https://doi.org/10.1143/jjap.28.142
Abstract
We observed the electron spin resonance of oxygen-nitrogen complexes (ONCs) and found that they have C2V symmetry. Although they contain nitrogen, hyperfine interaction (hf) with nitrogen cannot be clearly observed. These characters of ONCs resemble thermal donors (TDs) very closely.Keywords
This publication has 6 references indexed in Scilit:
- The Nature of Nitrogen-Oxygen Complexes in SiliconJapanese Journal of Applied Physics, 1988
- EPR studies of heat-treatment centers inp-type siliconPhysical Review B, 1987
- Nitrogen-Oxygen Complexes as Shallow Donors in Silicon CrystalsJapanese Journal of Applied Physics, 1986
- Site Symmetry and Ground-State Characteristics for the Oxygen Donor in SiliconPhysical Review Letters, 1985
- EPR spectra of heat-treatment centers in oxygen-rich siliconSolid State Communications, 1978
- Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance TechniquePhysical Review B, 1959