Vapour phase growth and properties of Pb1-xSnxTe single crystals
- 1 January 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 74 (1) , 129-134
- https://doi.org/10.1016/0022-0248(86)90255-1
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Single heterostructure lasers of PbS1-xSexand Pb1-xSnxSe with wide tunabilityIEEE Journal of Quantum Electronics, 1977
- Improvements in the crystalline quality of PbxSn1−xTe crystals grown by vapor transport in a closed systemJournal of Electronic Materials, 1976
- Ingot-nucleated Pb1−xSnxTe diode lasersJournal of Applied Physics, 1976
- Thermal limitations in PbSnTe detectorsInfrared Physics, 1975
- I-7 dependence of performance on dislocation density in diffused lead-tin-telluride (Pb 1-x Sn x Te) lasersIEEE Transactions on Electron Devices, 1975
- High-performance 8—14- µm Pb1-xSnxTe photodiodesProceedings of the IEEE, 1975
- Horizontal unseeded vapor growth of Iv-Vi compounds and alloysJournal of Electronic Materials, 1974
- Growth of large crystals of (Pb,Ge)Te and (Pb,Sn)TeJournal of Electronic Materials, 1974
- A new method for the growth of Pb1−xSnxTe single crystalsSolid State Communications, 1974
- LONG-WAVELENGTH INFRARED Pb1−xSnxTe DIODE LASERSApplied Physics Letters, 1968