Structural Study on Amorphous-Microcrystalline Mixed-Phase Si:H Films
- 1 June 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (6) , L439
- https://doi.org/10.1143/jjap.20.l439
Abstract
Isochronal annealings have been done on the amorphous-microcrystalline mixed-phase Si:H, and its structure has been investigated through X-ray diffraction and ir absorption measurements. The number of microcrystals increases with an increase in annealing temperature up to 500°C, while crystallite size is kept unchanged. The crystallite size starts growing larger when the annealing temperature exceeds 550°C. On the basis of the results, a structural model has been presented for the mixed-phase Si:H films.Keywords
This publication has 3 references indexed in Scilit:
- Boron Doping of Hydrogenated Silicon Thin FilmsJapanese Journal of Applied Physics, 1981
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H FilmsJapanese Journal of Applied Physics, 1980
- Proton Magnetic Resonance Spectra of Plasma-Deposited Amorphous Si: H FilmsPhysical Review Letters, 1980