Local atomic structure at thermally grown Si/SiO2 interfaces
- 1 October 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 39 (1-4) , 103-115
- https://doi.org/10.1016/0169-4332(89)90423-6
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- SiO2 film stress distribution during thermal oxidation of SiJournal of Vacuum Science & Technology B, 1988
- New normalization procedure for modulation spectroscopyReview of Scientific Instruments, 1987
- Low-temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopyJournal of Vacuum Science & Technology B, 1987
- Intrinsic SiO2 film stress measurements on thermally oxidized SiJournal of Vacuum Science & Technology B, 1987
- A measurement of intrinsic SiO2 film stress resulting from low temperature thermal oxidation of SiJournal of Vacuum Science & Technology B, 1986
- A Viscous Flow Model to Explain the Appearance of High Density Thermal SiO2 at Low Oxidation TemperaturesJournal of the Electrochemical Society, 1982
- Piezo-optical Evidence forTransitions at the 3.4-eV Optical Structure of SiliconPhysical Review Letters, 1972
- Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type SemiconductorsPhysical Review B, 1972
- Photoreflectance and electroreflectance in siliconSolid State Communications, 1969
- Reflectance Modulation by the Surface Field in GaAsPhysical Review Letters, 1968