Thermal stabilization of power HBTs using n-AlxGa1−xAs emitter ballast resistors with high thermal coefficient of resistance
- 1 September 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (9) , 1657-1661
- https://doi.org/10.1016/0038-1101(95)00050-4
Abstract
No abstract availableKeywords
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