Growth of large areas of grain boundary-free silicon-on-insulator
- 10 November 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (23) , 985-986
- https://doi.org/10.1049/el:19830669
Abstract
A technique combining a raster laser scan, selective annealing using patterned antireflection stripes and a seeding window has been successfully used to grow large single crystals of silicon-on-insulator. The raster-scanned laser spot simulates an advancing linear heat source and the anti-reflection stripes modulate the trailing edge in such a way that parasitic random nucleation is avoided. The seeding gives the film its crystal orientation.Keywords
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