Characteristics of Recrystallised Polysilicon on SiO2 Produced by Dual Electron Beam Processing
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Recrystallisation of CVD poly-Si on insulator by dual electron-beam processingElectronics Letters, 1982
- Laser and Electron Beam Interactions with SolidsMRS Bulletin, 1982
- Improved techniques for growth of large-area single-crystal Si sheets over SiO2 using lateral epitaxy by seeded solidificationApplied Physics Letters, 1981
- Single Crystal Silicon‐on‐Oxide by a Scanning CW Laser Induced Lateral Seeding ProcessJournal of the Electrochemical Society, 1981
- High speed scanning electron beam annealing of ion-implanted silicon layersThin Solid Films, 1980