High speed scanning electron beam annealing of ion-implanted silicon layers
- 1 November 1980
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 73 (1) , 221-226
- https://doi.org/10.1016/0040-6090(80)90354-5
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Thermal Conductivity of Silicon and Germanium from 3°K to the Melting PointPhysical Review B, 1964