Theory of the GaAs-doped p-i-n quantum well APD
- 1 September 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (9) , 1597-1601
- https://doi.org/10.1109/16.34218
Abstract
No abstract availableThis publication has 28 references indexed in Scilit:
- Field and spatial geometry dependencies of the electron and hole ionization rates in GaAs/AlGaAs multiquantum well APD'sIEEE Transactions on Electron Devices, 1988
- THE NATURE OF THE ELECTRON IMPACT IONIZATION ENHANCEMENT IN A MULTIQUANTUM WELL STRUCTURE : A NUMERICAL AND ANALYTICAL APPROACHLe Journal de Physique Colloques, 1987
- Physics of the enhancement of impact ionization in multiquantum well structuresApplied Physics Letters, 1987
- Chapter 6 Graded-Gap and Superlattice Devices by Bandgap EngineeringPublished by Elsevier ,1987
- Electron and hole impact ionization rates in InP/Ga0.47In0.53As superlatticeIEEE Journal of Quantum Electronics, 1986
- Electron and hole impact ionization coefficients in GaAs-AlxGa1−xAs superlatticesApplied Physics Letters, 1985
- Staircase solid-state photomultipliers and avalanche photodiodes with enhanced ionization rates ratioIEEE Transactions on Electron Devices, 1983
- Single-carrier-type dominated impact ionisation in multilayer structuresElectronics Letters, 1982
- The graded bandgap multilayer avalanche photodiode: A new low-noise detectorIEEE Electron Device Letters, 1982
- Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratioApplied Physics Letters, 1982