Dependence of the direct and indirect gap of AlSb on hydrostatic pressure
- 15 March 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (6) , 4044-4053
- https://doi.org/10.1103/physrevb.33.4044
Abstract
The variation of the lowest direct and indirect absorption edges of AlSb with pressure has been measured at room temperature for pressures up to the phase transition at 7.9±0.2 GPa. Deviations from the simple indirect (square-root) absorption law are shown to be consistent at all pressures with a model which takes into account the variation of the energy denominators with photon energy. The analysis of the data provides accurate values for the indirect gap versus pressure and for the direct gap at zero pressure. The indirect gap varies linearly with pressure and sublinearly with lattice constant. These results are compared with predictions based on the empirical pseudopotential method. The calculated sublinearity of the direct and indirect gaps is nearly the same.Keywords
This publication has 42 references indexed in Scilit:
- Optical properties of GaSb–AlSb superlatticesJournal of Vacuum Science & Technology B, 1983
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Determination of the five first interband transitions above the lowest indirect band gap of the aluminum antimonidePhysical Review B, 1982
- Electronic energy levels inalloysPhysical Review B, 1975
- Enhanced Indirect Optical Absorption in AlAs and GaPPhysical Review B, 1972
- Electroreflectance in AlSb: Observation of the Direct Band EdgePhysical Review Letters, 1966
- Reflectivity, Photoelectric Emission, and Work Function of AlSbPhysical Review B, 1965
- Conduction Band Minima in AlAs and AlSbPhysical Review Letters, 1963
- Fundamental Reflectivity Spectrum of Semiconductors with Zinc-Blende StructureJournal of Applied Physics, 1961
- Band Structure and Transport Properties of Some 3–5 CompoundsJournal of Applied Physics, 1961