Determination of the five first interband transitions above the lowest indirect band gap of the aluminum antimonide
- 15 June 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 25 (12) , 7830-7833
- https://doi.org/10.1103/physrevb.25.7830
Abstract
Electroreflectance measurements allowed us to determine the , , , , and AlSb transition energies from 25 to 295 K. At room temperature the and energies are, respectively, 2.211 and 2.300 eV; the spin-orbit splittings and are, respectively, 673 and 427 meV. The transition energy is 2.890 eV.
Keywords
This publication has 36 references indexed in Scilit:
- Temperature dependence of theenergy gap in gallium antimonidePhysical Review B, 1981
- Band nonparabolicities, broadening, and internal field distributions: The spectroscopy of Franz-Keldysh oscillationsPhysical Review B, 1974
- Temperature dependence of the band structure of germanium- and zinc-blende-type semiconductorsPhysical Review B, 1974
- Interband Masses of Higher Interband Critical Points in GePhysical Review Letters, 1973
- Schottky-Barrier Electroreflectance: Application to GaAsPhysical Review B, 1973
- Transverse ElectroreflectancePhysical Review Letters, 1967
- Electric Field Effects on the Dielectric Constant of SolidsPhysical Review B, 1967
- Electric-Field Effects on Optical Absorption near Thresholds in SolidsPhysical Review B, 1966
- Reflectivity, Photoelectric Emission, and Work Function of AlSbPhysical Review B, 1965
- Fundamental Reflectivity Spectrum of Semiconductors with Zinc-Blende StructureJournal of Applied Physics, 1961