PlasMOStor: A Metal−Oxide−Si Field Effect Plasmonic Modulator
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- 26 January 2009
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 9 (2) , 897-902
- https://doi.org/10.1021/nl803868k
Abstract
Realization of chip-based all-optical and optoelectronic computational networks will require ultracompact Si-compatible modulators, ideally comprising dimensions, materials, and functionality similar to electronic complementary metal−oxide−semiconductor (CMOS) components. Here we demonstrate such a modulator, based on field-effect modulation of plasmon waveguide modes in a MOS geometry. Near-infrared transmission between an optical source and drain is controlled by a gate voltage that drives the MOS into accumulation. Using the gate oxide as an optical channel, electro-optic modulation is achieved in device volumes of half of a cubic wavelength with femtojoule switching energies and the potential for gigahertz modulation frequencies.Keywords
This publication has 25 references indexed in Scilit:
- Channel plasmon subwavelength waveguide components including interferometers and ring resonatorsNature, 2006
- Plasmonics: Merging Photonics and Electronics at Nanoscale DimensionsScience, 2006
- Plasmon slot waveguides: Towards chip-scale propagation with subwavelength-scale localizationPhysical Review B, 2006
- Active control of slow light on a chip with photonic crystal waveguidesNature, 2005
- Channel Plasmon-Polariton Guiding by Subwavelength Metal GroovesPhysical Review Letters, 2005
- Geometries and materials for subwavelength surface plasmon modesJournal of the Optical Society of America A, 2004
- Channel plasmon–polariton in a triangular groove on a metal surfaceOptics Letters, 2004
- CMOS downsizing toward sub-10 nmSolid-State Electronics, 2004
- Local plasmon photonic transistorApplied Physics Letters, 2001
- Rationale and challenges for optical interconnects to electronic chipsProceedings of the IEEE, 2000