An electro-thermal model for metal-oxide-metal antifuses
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (8) , 1548-1558
- https://doi.org/10.1109/16.398671
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Dielectric based antifuse for logic and memory ICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A highly reliable metal-to-metal antifuse for high-speed field programmable gate arraysPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Conducting filament of the programmed metal electrode amorphous silicon antifusePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Reliable metal-to-metal oxide antifusesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A novel metal-insulator-metal structure for field-programmable devicesIEEE Transactions on Electron Devices, 1993
- High-performance metal/silicide antifuse (for CMOS technology)IEEE Electron Device Letters, 1992
- A novel double-metal structure for voltage-programmable linksIEEE Electron Device Letters, 1992
- Thermal conductivity of copper filmsThin Solid Films, 1974
- Thermal conductivity of thin films of alkali metalsThin Solid Films, 1972
- Wärmeleitfähigkeit dünner DrähteZeitschrift für Naturforschung A, 1958