Conducting filament of the programmed metal electrode amorphous silicon antifuse
- 30 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Antifuses in PROM and FPGA applications have used silicon and/or polycrystalline silicon electrodes. Metal electrode antifuses have the lowest resistance and lowest capacitance among programmable interconnect structures. The ViaLink, a metal electrode amorphous silicon antifuse, has been used as a programmable interconnect device for a FPGA. This paper describes for the first time, the composition, structure, electrical characteristics, and temperature dependence of the conducting filament in the programmed TiW electrode amorphous silicon antifuse.> Author(s) Gordon, K.E. QuickLogic Corp., Santa Clara, CA, USA Wong, R.J.Keywords
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